ATOMIC INTERMIXING AND ELECTRONIC INTERACTION AT THE PD-SI(111) INTERFACE

被引：17

作者：

BISI, O ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.52.1633

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1633 / 1636

页数：4

共 25 条

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[3] ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22): : 4707 - 4716
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[5] BISI O, UNPUB
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[7] LATTICE-LOCATION EXPERIMENT OF THE NI-SI INTERFACE BY THIN-CRYSTAL CHANNELING OF HELIUM-IONS
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[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (10) : 671 - 674
[8] COMIN F, 1983, PHYS REV LETT, V51, P2403
[9] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
[10] PALLADIUM-SILICIDE SCHOTTKY-BARRIER IR-CCD FOR SWIR APPLICATIONS AT INTERMEDIATE TEMPERATURES
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[J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 89 - 90

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