SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI

被引：50

作者：

HAUENSTEIN, RJ ^{[1
]}

SCHLESINGER, TE ^{[1
]}

MCGILL, TC ^{[1
]}

HUNT, BD ^{[1
]}

SCHOWALTER, LJ ^{[1
]}

机构：

[1] GE,CTR RES & DEV,SCHENECTADY,NY 12301

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.96007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：853 / 855

页数：3

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