CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111)

被引：130

作者：

LIEHR, M ^{[1
]}

SCHMID, PE ^{[1
]}

LEGOUES, FK ^{[1
]}

HO, PS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.54.2139

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2139 / 2142

页数：4

共 9 条

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