EFFECTS OF VARIATIONS OF SILICIDE CHARACTERISTICS ON THE SCHOTTKY-BARRIER HEIGHT OF SILICIDE-SILICON INTERFACES

被引：33

作者：

SCHMID, PE ^{[1
]}

HO, PS ^{[1
]}

FOLL, H ^{[1
]}

TAN, TY ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.28.4593

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4593 / 4601

页数：9

共 33 条

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