DIFFERENTIAL MOLECULAR-BEAM EPITAXY FOR MULTILAYERED BIPOLAR-DEVICES

被引：2

作者：

KONIG, U

KUISL, M

LUY, JF

KIBBEL, H

SCHAFFLER, F

机构：

[1] AEG Research Center Ulm, D 7900 Ulm

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90420-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Patterned multilayers are deposited by means of differential silicon MBE. Simultaneously monocrystalline islands are formed in a polycrystalline embedment. The structure is investigated with respect to the poly/mono-boundary and the polysilicon. The poly-embedment can work as an isolation or as an interconnection for a mono-island. Several devices have been realized, namely differential diodes, a differential three-dimensional IMPATT, and a differential resonant tunnel diode and these demonstrate the feasibility of the differential multilayer silicon MBE. © 1990.

引用

页码：253 / 260

页数：8

共 7 条

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