VACUUM MICROTRIODE WITH COMB-SHAPED LATERAL FIELD-EMITTER ARRAY

被引：5

作者：

ITOH, J

USHIKI, K

TSUBURAYA, K

KANEMARU, S

机构：

[1] Futaba Corporation, Chousei-mura, Chiba, 299-43

[2] Electrotechnical Laboratory, Ibaraki, Tsukuba-shi, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 6A期

关键词：

VACUUM MICROELECTRONICS; VACUUM TRIODE; VACUUM TRANSISTOR; FIELD-EMITTER ARRAY; LATERAL FIELD-EMITTER ARRAY; COMB-SHAPED FIELD-EMITTER ARRAY;

D O I：

10.1143/JJAP.32.L809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new vacuum triode with a lateral field-emitter array (FEA) has been fabricated, and its characteristics have been measured. The emitter has an array of 3-mum-wide-edged rectangular tips made of a 0.25-mum-thick tungsten film deposited on a quartz substrate with 9 mum pitch. The emitter-to-gate and emitter-to-anode spacings were 0.5 mum and 5 mum, respectively. Emission and triode characteristics were measured. A transconductance of about 0.7 muS/150-tips were obtained at a gate voltage of 110 V and an anode voltage of 150 V. Device structure and characteristics are described.

引用

页码：L809 / L812

页数：4

共 22 条

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A) :1221-1226

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