VACUUM MICROTRIODE CHARACTERISTICS

被引：7

作者：

CARR, WN ^{[1
]}

WANG, HJ ^{[1
]}

CHIN, KK ^{[1
]}

MARCUS, RB ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 04期

关键词：

Cathode and anode - Device characteristics - Electron flux - IV characteristics - Series resistances - Trajectory deflection - Trajectory simulation - Vacuum microelectronic devices;

D O I：

10.1116/1.576510

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pentode-like I-V characteristics are simulated for lateral vacuum microelectronic devices with wedge-shaped field emission cathodes. A single grid provides electrostatic isolation between the cathode and anode for a large equivalent anode series resistance. Device characteristics are presented for a structure with a field emission cathode, one control grid, an anode, and two trajectory deflection electrodes. The cathode-to-control grid separation for trajectory simulation is a nominal 1 μm and the emission tip radii are 0.01 and 0.05 μm. The device length including deflectors is 18 μm. Device characteristics are modelled over an anode potential range of 10–200 V. At 50 V anode potential, a transconductance of 4 μ S/mm and 0.1 S/mm is calculated based on 0.05 and 0.01 μm wedge radii, respectively. © 1990, American Vacuum Society. All rights reserved.

引用

页码：3581 / 3585

页数：5

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