STRESSES IN TASIX FILMS SPUTTER DEPOSITED ON POLYCRYSTALLINE SILICON

被引：15

作者：

TEAL, VL

MURARKA, SP

机构：

[1] RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12180

[2] RENSSELAER POLYTECH,CTR INTEGRATED ELECTR,TROY,NY 12180

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.338326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5038 / 5046

页数：9

共 16 条

[1]

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[2]

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[3]

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[4] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].

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SARASWAT, KC ;

HELMS, CR ;

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763

[5] THERMAL STRAIN IN THIN LEAD FILMS .3. DEPENDENCES OF THE STRAIN ON FILM THICKNESS AND ON GRAIN-SIZE [J].

MURAKAMI, M .

THIN SOLID FILMS, 1979, 59 (01) :105-116

[6] EFFECT OF PHOSPHORUS DOPING ON STRESS IN SILICON AND POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

RETAJCZYK, TF .

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[7] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

[8] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :474-482

[9]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P11

[10]

NIESSEN AK, 1981, J LESS-COMMON MET, V82, P75, DOI 10.1016/0022-5088(81)90200-9

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