HIGH-TEMPERATURE HYDROGEN ANNEAL OF MNOS STRUCTURES

被引:11
作者
SCHOLS, G
MAES, H
DECLERCK, G
VANOVERSTRAETEN, R
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期
关键词
D O I
10.1051/rphysap:019780013012082500
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:825 / 828
页数:4
相关论文
共 7 条
[1]  
BALK P, 1965, OCT BUFF M EL SOC
[2]   DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].
CASTAGNE, R ;
VAPAILLE, A .
SURFACE SCIENCE, 1971, 28 (01) :157-+
[3]   LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].
CASTRO, PL ;
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+
[4]   CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].
DEAL, BE ;
MACKENNA, EL ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&
[5]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
KUHN, M .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+
[6]  
SCHOLS G, 1976, MAY WASH M EL SOC
[7]  
TOPICH JA, 1976, J ELECTROCHEM SOC, V123, P539