COMPUTER-AIDED ENGINEERING FOR MICROWAVE AND MILLIMETER-WAVE CIRCUITS USING THE FD-TD TECHNIQUE OF FIELD SIMULATIONS

This article describes our techniques for the three-dimensional full-wave field simulation of the computer-aided design of broad-band circuits operating in the microwave and millimeter-wave frequency region. After reviewing the numerical algorithm of the finite-difference time-domain approach, the concept of the lumped device model is introduced into, the simulation. We then propose an efficient way of calculating the scattering parameters of passive elements that uses the lumped device model as a standard termination of the circuit port. The analysis of a nonlinear circuit directly combined with the field simulation is also presented, and finally, a method of simulating integrated circuits mounted in a package is discussed.