EPITAXIAL-GROWTH OF DIAMOND FILMS ON THE (221) AND (100) SURFACES OF C-BN WITH MICROSTRUCTURES FULL OF (100) FACETS

被引：13

作者：

CHAI, WP ^{[1
]}

GU, YS ^{[1
]}

LI, M ^{[1
]}

MAI, ZH ^{[1
]}

LI, QZ ^{[1
]}

YUAN, L ^{[1
]}

PANG, SJ ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB VACUUM PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond films on surfaces of cubic boron nitride substrate grown by microwave plasma chemical vapor deposition are investigated. Deposited films are characterized by scanning electron microscopy, reflection high-energy electron diffraction, and micro-Raman spectroscopy. We found a new stacking growth mode of the epitaxial diamond films which is distinguished from the previous observed modes. The morphologies of diamond (100) facets formed on the {221} and {100} surfaces of cubic boron nitride are steps and/or stages, respectively. This is beneficial to growing a fair perfect single-crystal films of diamond.

引用

页码：1941 / 1943

页数：3

共 21 条

[1]

CHAI WP, IN PRESS J CRYST GRO

[2]

CHANG ZP, 1991, THESIS CHINESE ACADE

[3]

CHEN G, 1992, THESIS CHINESE ACADE

[4]

FIELD JE, 1979, PROPERTIES DIAMOND, P281

[5]

INUZUKA T, 1990, SPIE INT SOC OPTICAL, V1325

[6] ORIENTED CUBIC NUCLEATIONS AND LOCAL EPITAXY DURING DIAMOND GROWTH ON SILICON (100) SUBSTRATES [J].

JENG, DG ;

TUAN, HS ;

SALAT, RF ;

FRICANO, GJ .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :1968-1970

[7] EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES [J].

JIANG, X ;

KLAGES, CP ;

ZACHAI, R ;

HARTWEG, M ;

FUSSER, HJ .

APPLIED PHYSICS LETTERS, 1993, 62 (26) :3438-3440

[8] EPITAXIAL-GROWTH OF DIAMOND THIN-FILMS ON CUBIC BORON NITRIDE(111) SURFACES BY DC PLASMA CHEMICAL VAPOR-DEPOSITION [J].

KOIZUMI, S ;

MURAKAMI, T ;

INUZUKA, T ;

SUZUKI, K .

APPLIED PHYSICS LETTERS, 1990, 57 (06) :563-565

[9]

LI QZ, 1993, THESIS CHINESE ACADE

[10]

MISHIMA O, 1991, APPL DIAMOND FILMS R, P647

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