EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES

被引：293

作者：

JIANG, X ^{[1
]}

KLAGES, CP ^{[1
]}

ZACHAI, R ^{[1
]}

HARTWEG, M ^{[1
]}

FUSSER, HJ ^{[1
]}

机构：

[1] DAIMLER BENZ AG,MAT RES,W-7900 ULM,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial (001) diamond film were grown on mirror-polished single-crystalline (001) silicon substrates by microwave plasma chemical vapor deposition from a methane/hydrogen gas mixture. The films were characterized by means of scanning electron microscopy, Raman spectroscopy, and x-ray analysis. The results show that the diamond crystallites are oriented to the silicon substrate with both the (001) planes and the [110] directions parallel to the silicon substrate.

引用

页码：3438 / 3440

页数：3

共 8 条

[1]

[Anonymous], 1979, PROPERTIES DIAMOND

[2] FORMATION OF UNIFORM SOLID-PHASE EPITAXIAL COSI2 FILMS BY PATTERNING METHOD [J].