TEXTURED DIAMOND GROWTH ON (100) BETA-SIC VIA MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：341

作者：

STONER, BR

GLASS, JT

机构：

[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.106541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Textured diamond films have been deposited on beta-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3-degrees. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.

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页码：698 / 700

页数：3

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