学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
A THERMIONIC ELECTRON-EMISSION MODEL FOR CHARGE RETENTION IN SAMOS STRUCTURES
被引:22
作者
:
NOZAWA, H
论文数:
0
引用数:
0
h-index:
0
NOZAWA, H
KOHYAMA, S
论文数:
0
引用数:
0
h-index:
0
KOHYAMA, S
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1982年
/ 21卷
/ 02期
关键词
:
D O I
:
10.1143/JJAP.21.L111
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L111 / L112
页数:2
相关论文
共 3 条
[1]
INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON
[J].
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
;
KERR, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KERR, DR
.
APPLIED PHYSICS LETTERS,
1975,
27
(09)
:505
-507
[2]
ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE
[J].
IIZUKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
IIZUKA, H
;
MASUOKA, F
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
MASUOKA, F
;
SATO, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
SATO, T
;
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
ISHIKAWA, M
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(04)
:379
-387
[3]
NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246
←
1
→
共 3 条
[1]
INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON
[J].
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
;
KERR, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KERR, DR
.
APPLIED PHYSICS LETTERS,
1975,
27
(09)
:505
-507
[2]
ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE
[J].
IIZUKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
IIZUKA, H
;
MASUOKA, F
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
MASUOKA, F
;
SATO, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
SATO, T
;
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
TOSHIBA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN
ISHIKAWA, M
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(04)
:379
-387
[3]
NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246
←
1
→