METASTABLE ASSISTED DEPOSITION OF TIN FILMS

被引：12

作者：

BARANKOVA, H

BARDOS, L

BERG, S

机构：

[1] Uppsala University, Institute of Technology, Ångström Consortium for Thin Film Processing

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.114479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An excess heat from an exothermic reaction of metastable Ar (4(3)P(0)) and Ar (4(3)P(2)) atoms with N-2 molecules at low contents of N-2 in Ar was found to be responsible for an enhanced thermionic emission, an enhanced production of Ti target vapor, an increased ionization, and consequently for an enhanced deposition rate of TiN films in the radio frequency hollow cathode plasma jet (RHCPJ). This finding emphasizes favorable geometry of hollow cathodes, as well as an important role of metastables in plasma-assisted processes. (C) 1995 American Institute of Physics.

引用

页码：1521 / 1523

页数：3

共 12 条

[1] ENHANCEMENT OF THE REACTIVE DEPOSITION RATE OF TIN FILMS AT LOW NITROGEN-CONTENT [J].