DC ELECTRICAL BREAKDOWN IN THIN SILICON OXIDE FILMS AT REDUCED AIR PRESSURES

被引：5

作者：

BRESTECHCO, M

KLEIN, N

机构：

[1] Dept. of Electrical Engineering, Israel Institute of Technology, Haifa

来源：

THIN SOLID FILMS | 1969年 / 3卷 / 03期

关键词：

D O I：

10.1016/0040-6090(69)90027-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nature of d.c. breakdown processes in evaporated silicon oxide films does not change in the air pressure range 2×10-5 to 760 torr. The maximum thermal breakdown voltage, however, decreases slightly with pressure owing to the decrease in the thermal conductance of the specimen. In vacuum, the observation of the maximum thermal breakdown voltage is not hampered by sparking in air and can be extended to several thousand volts. © 1969.

引用

页码：175 / +

页数：1

共 6 条

[1] BREAKDOWN CONDUCTION IN AL-SIO-AL CAPACITORS
BUDENSTEIN, PP
HAYES, PJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2837 - +
[2] JAKOB M, 1942, ELEMENTS HEAT TRANSF, P73
[3] EXTENDED TEMPERATURE RANGE FOR MAXIMUM DIELECTRIC STRENGTH
KLEIN, N
LISAK, Z
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (07): : 979 - +
[4] MAXIMUM DIELECTRIC STRENGTH OF THIN SILICON OXIDE FILMS
KLEIN, N
GAFNI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 281 - +
[5] KLEIN N, 1965, RELIABILITY, V3, P315
[6] Siddall G., 1959, VACUUM, V9, P274

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