TEMPERATURE INFLUENCE ON CHANNEL CONDUCTANCE OF MOS TRANSISTORS

[1] COBBOLD RSC, 1966, ELECTRON LETT, V2, P190

[2] HEIMAN FP, 1965, IEEE DEVICE, VED12, P142

[3] LEISTIKO O, 1965, IEEE T ELECTRON DEVI, VED12, P248

[4] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH4

[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[6] VANNIELEN JA, 1967, PHILIPS RES REP, V22, P55

[1] COBBOLD RSC, 1966, ELECTRON LETT, V2, P190

[2] HEIMAN FP, 1965, IEEE DEVICE, VED12, P142

[3] LEISTIKO O, 1965, IEEE T ELECTRON DEVI, VED12, P248

[4] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH4

[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[6] VANNIELEN JA, 1967, PHILIPS RES REP, V22, P55