THERMAL-ANALYSIS OF SOLID-STATE DEVICES USING THE BOUNDARY ELEMENT METHOD

被引：25

作者：

LEE, CC ^{[1
]}

PALISOC, AL ^{[1
]}

BAYNHAM, JMW ^{[1
]}

机构：

[1] COMPUTAT MECH,SOUTHHAMPTON 504 2AA,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

INTEGRATED CIRCUITS - MATHEMATICAL TECHNIQUES - Boundary Element Method - TRANSISTORS; FIELD EFFECT - Surfaces;

D O I：

10.1109/16.3380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal analysis of two-dimensional and three-dimensional two-layer device structures have been carried out using the boundary element method (BEM). The resulting thermal profiles for two different device structures agree very well with those obtained using analytical solutions. This agreement indicates not only the accuracy of the BEM but also the correct derivation of the analytical solutions.

引用

页码：1151 / 1153

页数：3

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