WIDELY TUNABLE SEMICONDUCTOR OPTICAL FIBER RING LASER

被引：6

作者：

OSHIBA, S

NAGAI, K

KAWAHARA, M

WATANABE, A

KAWAI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期

关键词：

D O I：

10.1063/1.102024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2383 / 2385

页数：3

共 7 条

[1] V-GROOVED INNER-STRIPE LASER-DIODES ON A P-TYPE SUBSTRATE OPERATING OVER 100 MW AT 1.5 MU-M WAVELENGTH [J].

HORIKAWA, H ;

OSHIBA, S ;

MATOBA, A ;

KAWAI, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (07) :374-376

[2] HIGH-POWER OUTPUT, LOW THRESHOLD, INNER STRIPE GAINASP LASER DIODE ON A P-TYPE INP SUBSTRATE [J].

IMANAKA, K ;

HORIKAWA, H ;

MATOBA, A ;

KAWAI, Y ;

SAKUTA, M .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :282-283

[3]

JOPSON RM, 1986, APPL PHYS LETT, V48, P206

[4] HIGH-POWER OUTPUT OVER 200 MW OF 1.3 MU-M GAINASP VIPS LASERS [J].

OSHIBA, S ;

MATOBA, A ;

KAWAHARA, M ;

KAWAI, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :738-743

[5]

OSHIBA S, 1989, 7TH INT C OPT OPT FI

[6]

TOHMORI Y, 1983, 4TH INT C OPT OPT FI

[7]

WYATT R, 1983, ELECTRON LETT, V19, P112

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