RENORMALIZATION OF DIRECT AND INDIRECT BAND-GAPS IN HIGHLY EXCITED ALXGA1-XAS

被引：23

作者：

BOHNERT, K

KALT, H

SMIRL, AL

NORWOOD, DP

BOGGESS, TF

DHAENENS, IJ

机构：

[1] N TEXAS STATE UNIV,CTR APPL QUANTUM ELECTR,DEPT PHYS,DENTON,TX 76203

[2] HUGHES RES LABS,MALIBU,CA 90265

来源：

关键词：

D O I：

10.1103/PhysRevLett.60.37

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：37 / 40

页数：4

共 15 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[2] ELECTRON-HOLE PLASMA IN DIRECT-GAP GA1-XALXAS AND K-SELECTION RULE
CAPIZZI, M
MODESTI, S
FROVA, A
STAEHLI, JL
GUZZI, M
LOGAN, RA
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2028 - 2035
[3] CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421
[4] ELECTRON-HOLE PLASMA IN PHOTO-EXCITED INDIRECT-GAP ALXGA1-XAS
COHEN, E
STURGE, MD
OLMSTEAD, MA
LOGAN, RA
[J]. PHYSICAL REVIEW B, 1980, 22 (02): : 771 - 777
[5] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON
COMBESCOT, M
NOZIERES, P
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +
[6] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
[7] KALT H, IN PRESS
[8] EXPONENTIAL-DISTRIBUTION OF THE RADIATIVE DECAY-RATES INDUCED BY ALLOY SCATTERING IN AN INDIRECT-GAP SEMICONDUCTOR
KLEIN, MV
STURGE, MD
COHEN, E
[J]. PHYSICAL REVIEW B, 1982, 25 (06): : 4331 - 4333
[9] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS
LAWAETZ, P
[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3460 - &
[10] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE
LIFSHITZ, N
JAYARAMAN, A
LOGAN, RA
CARD, HC
[J]. PHYSICAL REVIEW B, 1980, 21 (02) : 670 - 678