PHOTO-LUMINESCENCE IN SPUTTERED AMORPHOUS SI-H ALLOYS

被引：29

作者：

COLLINS, RW

PAESLER, MA

MODDEL, G

PAUL, W

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(80)90283-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：681 / 686

页数：6

共 15 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[2] CHARACTERIZATION OF HIGH GAP STATE DENSITIES IN HEAVILY HYDROGENATED A-SI
ANDERSON, DA
MODDEL, G
PAUL, W
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 345 - 350
[3] ANDERSON DA, SOLID STATE COMMUN
[4] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI
AUSTIN, IG
NASHASHIBI, TS
SEARLE, TM
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 373 - 391
[5] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[6] COLLINS RM, UNPUBLISHED
[7] ENGEMANN D, 1976, AIP31 C P
[8] FREEMAN E, PHYS REV
[9] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[10] PAESLER MA, PHIL MAG