ELECTRICAL-PROPERTIES OF LASER ANNEALED AUGE-GAAS OHMIC CONTACTS

[1] AINA O, 1981, J ELECTROCHEM SO OCT

[2] ANDERSON WT, 1981, MAR P IEEE C HIGH TE

[3] OHMIC CONTACTS ON N-GAAS PRODUCED BY LASER ALLOYING OF GE FILMS [J]. ELECTRONICS LETTERS, 1980, 16 (04) : 113 - 114

[4] BARNES PA, 1978, AIP C P, V50, P647

[5] BHASTI PL, 1977, THIN SOLID FILMS, V41, pL3

[6] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[7] DRABY AH, 1981, APPL PHYS LETT, V38, P562

[8] ECKHARDT G, 1978, AIP C P, V50, P641

[9] GOLD RB, 1978, AIP C P, V50, P635

[10] METAL-N-TYPE SEMICONDUCTOR OHMIC CONTACT WITH A SHALLOW N+ SURFACE-LAYER [J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1133 - 1138

[1] AINA O, 1981, J ELECTROCHEM SO OCT

[2] ANDERSON WT, 1981, MAR P IEEE C HIGH TE

[3] OHMIC CONTACTS ON N-GAAS PRODUCED BY LASER ALLOYING OF GE FILMS [J]. ELECTRONICS LETTERS, 1980, 16 (04) : 113 - 114

[4] BARNES PA, 1978, AIP C P, V50, P647

[5] BHASTI PL, 1977, THIN SOLID FILMS, V41, pL3

[6] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[7] DRABY AH, 1981, APPL PHYS LETT, V38, P562

[8] ECKHARDT G, 1978, AIP C P, V50, P641

[9] GOLD RB, 1978, AIP C P, V50, P635

[10] METAL-N-TYPE SEMICONDUCTOR OHMIC CONTACT WITH A SHALLOW N+ SURFACE-LAYER [J]. SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1133 - 1138