STRAIN RELIEF IN EPITAXIAL FLUORIDE BUFFER LAYERS FOR SEMICONDUCTOR HETEROEPITAXY

被引：36

作者：

ZOGG, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：933 / 935

页数：3

共 19 条

[1] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS
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ISHIWARA, H
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FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L139 - L141
[2] HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES
ASANO, T
ISHIWARA, H
KAIFU, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1474 - 1481
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001)
FARROW, RFC
JONES, GR
WILLIAMS, GM
YOUNG, IM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 954 - 956
[4] ANALYSIS OF EPITAXIAL FLUORIDE-SEMICONDUCTOR INTERFACES
GIBSON, JM
PHILLIPS, JM
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 828 - 830
[5] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING
HASHIMOTO, S
PENG, JL
GIBSON, WM
SCHOWALTER, LJ
FATHAUER, RW
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073
[6] Hayes W., 1974, CRYSTALS FLUORITE ST
[7] STRUCTURAL-PROPERTIES OF GAAS ON SI AND GE SUBSTRATES
NEUMANN, DA
ZHU, XM
ZABEL, H
HENDERSON, T
FISCHER, R
MASSELINK, WT
KLEM, J
PENG, CK
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 642 - 644
[8] ONODA H, 1985, DEC INT EL DEV M IED, P680
[9] EPITAXIAL-GROWTH AND CHARACTERIZATION OF CAF2 ON SI
SCHOWALTER, LJ
FATHAUER, RW
GOEHNER, RP
TURNER, LG
DEBLOIS, RW
HASHIMOTO, S
PENG, JL
GIBSON, WM
KRUSIUS, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 302 - 308
[10] SEGMULLER A, 1986, ANAL TECHNIQUES THIN, V29

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