KINETIC-ENERGY ENHANCED MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI(100)

被引：14

作者：

GARRISON, BJ ^{[1
]}

MILLER, MT ^{[1
]}

BRENNER, DW ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

CHEMICAL PHYSICS LETTERS | 1988年 / 146卷 / 06期

关键词：

D O I：

10.1016/0009-2614(88)87500-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：553 / 556

页数：4

共 20 条

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[8] ION-SOLID INTERACTIONS DURING ION-BEAM DEPOSITION OF GE-74 AND SI-30 ON SI AT VERY LOW ION ENERGIES (0-200 EV RANGE) [J].

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