INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY - EFFECTS OF SURFACE RECONSTRUCTION

被引：62

作者：

GOSSMANN, HJ

FELDMAN, LC

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.32.6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：6 / 11

页数：6

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