STACKING-FAULT MODEL FOR THE SI(111)-(7X7) SURFACE

[1] ALEXANDER H, 1979, J PHYS PARIS, V40, P27

[2] BENNETT PA, 1980, THESIS U WISCONSIN M

[3] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[4] CONRAD E, COMMUNICATION

[5] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2043 - 2046

[6] ELECTRONIC STACKING-FAULT STATES IN SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (10) : 5384 - 5396

[7] STRUCTURE OF SI(111)-(7X7)H [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (25) : 1632 - 1635

[8] NGOC TC, 1973, SURF SCI, V35, P117, DOI 10.1016/0039-6028(73)90208-2

[9] DISPLACEMENT CORRELATIONS IN COVALENT SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (13): : 2449 - 2460

[10] RECONSTRUCTION MECHANISM AND SURFACE-STATE DISPERSION FOR SI(111)-(2 X 1) [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (18) : 1349 - 1352

[1] ALEXANDER H, 1979, J PHYS PARIS, V40, P27

[2] BENNETT PA, 1980, THESIS U WISCONSIN M

[3] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[4] CONRAD E, COMMUNICATION

[5] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2043 - 2046

[6] ELECTRONIC STACKING-FAULT STATES IN SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (10) : 5384 - 5396

[7] STRUCTURE OF SI(111)-(7X7)H [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (25) : 1632 - 1635

[8] NGOC TC, 1973, SURF SCI, V35, P117, DOI 10.1016/0039-6028(73)90208-2

[9] DISPLACEMENT CORRELATIONS IN COVALENT SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (13): : 2449 - 2460

[10] RECONSTRUCTION MECHANISM AND SURFACE-STATE DISPERSION FOR SI(111)-(2 X 1) [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (18) : 1349 - 1352