ELECTRONIC STACKING-FAULT STATES IN SILICON

被引：82

作者：

MATTHEISS, LF

PATEL, JR

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.23.5384

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5384 / 5396

页数：13

共 25 条

[1]

ALEXANDER H, 1979, J PHYS PARIS S, V6, P7

[2] EMPIRICAL THIRD NEIGHBOUR LCAO ENERGY BANDS OF SILICON [J].

ALSTRUP, I ;

JOHANSEN, K .

PHYSICA STATUS SOLIDI, 1968, 28 (02) :555-&

[3] ELECTRONIC-STRUCTURE OF (111) SURFACE OF SILICON [J].

BORTOLANI, V ;

CALANDRA, C ;

KELLY, MJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (18) :L349-L353

[4] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ ;

COHEN, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :405-419

[5] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

[6] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (02) :790-796

[7] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[8] ELECTRONIC-STRUCTURE OF SILICON [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1974, 10 (12) :5095-5107

[9] PSEUDOPOTENTIAL CALCULATION OF STACKING-FAULT ENERGY IN SILICON [J].

CHEN, LJ ;

FALICOV, LM .

PHILOSOPHICAL MAGAZINE, 1974, 29 (01) :1-8

[10] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].

DRESSELHAUS, G ;

DRESSELHAUS, MS .

PHYSICAL REVIEW, 1967, 160 (03) :649-+

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