VACANCY TRANSIENTS DURING IMPURITY DIFFUSION IN SEMICONDUCTORS

被引：6

作者：

HU, SM

MOCK, MS

机构：

来源：

PHYSICAL REVIEW B | 1970年 / 1卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.1.2582

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：2582 / &

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