MICROFABRICATION OF DIAMOND FILMS - SELECTIVE DEPOSITION AND ETCHING

被引:8
作者
MIYAUCHI, S
KUMAGAI, K
MIYATA, K
NISHIMURA, K
KOBASHI, K
NAKAUE, A
GLASS, JT
BUCKLEYGOLDER, IM
机构
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[2] UKAEA,CTR MICROELECTR MAT,HARWELL LAB,HARWELL OX11 0RA,BERKS,ENGLAND
关键词
D O I
10.1016/0257-8972(91)90312-K
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
For the future application of diamond films to microelectronic devices and sensors, it is necessary to develop methods for making patterns a few micrometers wide of diamond films on substrates. To this end, two different methods of selected-area deposition were developed: reactive-ion etching and amorphous silicon masking of silicon substrates. It was shown that selective nucleation on silicon was achieved by these methods, and selective deposition of new diamonds on diamond film was carried out using the amorphous silicon masking method. The diamond films were etched using electron-beam assisted plasma etching, and consequently, a diamond film pattern of 10-mu-m wide was formed.
引用
收藏
页码:465 / 473
页数:9
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