ELECTRONIC-STRUCTURE OF INSULATING ZIRCONIUM NITRIDE

被引：56

作者：

PRIETO, P

GALAN, L

SANZ, JM

机构：

[1] Departamento Física Aplicada C-XII, Universidad Autónoma de Madrid, Cantoblanco

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.47.1613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of Zr3N4, grown by low-energy (0.25 keV) N2+ implantation Of polycrystalline zirconium has been investigated by x-ray photoelectron spectroscopy. Both the valence-band and core-level spectra demonstrate the insulating characteristics of Zr3N4 as well as the metal-insulator phase transition in ZrN(x) when x almost-equal-to 1.33.

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页码：1613 / 1615

页数：3

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