SPATIALLY DIRECT AND INDIRECT OPTICAL-TRANSITIONS IN SHALLOW ETCHED GAAS/ALGAAS WIRES, DOTS AND ANTIDOTS

被引：11

作者：

HIRLER, F

STRENZ, R

KUCHLER, R

ABSTREITER, G

BOHM, G

SMOLINER, J

TRANKLE, G

WEIMANN, G

机构：

[1] Walter Schottky Inst., Tech. Univ., Munchen, Garching

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 04期

关键词：

D O I：

10.1088/0268-1242/8/4/024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By applying a shallow etching technique, the electrons in a remote doped GaAs/AlGaAs quantum well and the photogenerated holes are separated into adjacent lateral regions. The dominant photoluminescence of these carriers is shown to be indirect in real space. In addition, a spatially direct luminescence is observed. Its origin depends on the type of structuring and is discussed for wires, dots and antidots in comparison with unstructured samples.

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页码：617 / 621

页数：5

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