PHOTOLUMINESCENCE FROM A SINGLE GAAS/ALGAAS QUANTUM DOT

被引：279

作者：

BRUNNER, K

BOCKELMANN, U

ABSTREITER, G

WALTHER, M

BOHM, G

TRANKLE, G

WEIMANN, G

机构：

[1] Walter Schottky Institut, Technische Universität München

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.69.3216

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Isolated single quantum dots of different size have been fabricated by laser-induced local interdiffusion of a GaAs/AlGaAs quantum-well structure. Microscopic photoluminescence (PL) reveals a splitting and a blueshift, which depend systematically on dot size. The distinct PL peaks separated in energy by up to 10 meV are attributed to recombination between zero-dimensional (OD) electron and hole states. Complete quantization and inherent exclusion of inhomogeneous broadening in a single dot structure cause PL linewidths below 0.5 meV. The strength of the higher-energy transitions indicates the slowed energy relaxation theoretically predicted for OD systems.

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页码：3216 / 3219

页数：4

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