LIQUID-PHASE EPITAXIAL-GROWTH OF IN1-XGAXAS1-YSBY WITH INAS ENRICHED COMPOSITION ON INAS SUBSTRATE

被引：9

作者：

KOBAYASHI, N

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 11期

关键词：

D O I：

10.1143/JJAP.20.2253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2253 / 2254

页数：2

共 7 条

[1]

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[3] ROOM-TEMPERATURE OPERATION OF THE INGAASSB-ALGAASSB DH LASER AT 1.8 MU-M WAVELENGTH [J].

KOBAYASHI, N ;

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UEMURA, C .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L30-L32

[4] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB-GASB AND INGAASSB-ALGAASSB DH WAFERS [J].

KOBAYASHI, N ;

HORIKOSHI, Y ;

UEMURA, C .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) :2169-2170

[5] PSEUDO-QUATERNARY PHASE-DIAGRAM OF GA-IN-AS-SB SYSTEM [J].

NAKAJIMA, K ;

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MURAKAMI, Y .

JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) :87-92

[6] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB ON (111)B INAS [J].

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[7]

TRINGFELLOW GB, 1971, J ELECTROCHEM SOC, V118, P805

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