LIQUID-PHASE EPITAXIAL-GROWTH OF IN1-XGAXAS1-YSBY WITH INAS ENRICHED COMPOSITION ON INAS SUBSTRATE

被引:9
作者
KOBAYASHI, N
HORIKOSHI, Y
机构
关键词
D O I
10.1143/JJAP.20.2253
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2253 / 2254
页数:2
相关论文
共 7 条
[1]  
Dolginov L. M., 1978, Soviet Journal of Quantum Electronics, V8, DOI 10.1070/QE1978v008n03ABEH010046
[2]   STUDY OF PHASE-EQUILIBRIA AND HETEROJUNCTIONS IN GA-IN-AS-SB QUATERNARY SYSTEM [J].
DOLGINOV, LM ;
ELISEEV, PG ;
LAPSHIN, AN ;
MILVIDSKII, MG .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (06) :631-638
[3]   ROOM-TEMPERATURE OPERATION OF THE INGAASSB-ALGAASSB DH LASER AT 1.8 MU-M WAVELENGTH [J].
KOBAYASHI, N ;
HORIKOSHI, Y ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L30-L32
[4]   LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB-GASB AND INGAASSB-ALGAASSB DH WAFERS [J].
KOBAYASHI, N ;
HORIKOSHI, Y ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) :2169-2170
[5]   PSEUDO-QUATERNARY PHASE-DIAGRAM OF GA-IN-AS-SB SYSTEM [J].
NAKAJIMA, K ;
OSAMURA, K ;
YASUDA, K ;
MURAKAMI, Y .
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) :87-92
[6]   LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB ON (111)B INAS [J].
SANKARAN, R ;
ANTYPAS, GA .
JOURNAL OF CRYSTAL GROWTH, 1976, 36 (02) :198-204
[7]  
TRINGFELLOW GB, 1971, J ELECTROCHEM SOC, V118, P805