GAAS HALL DEVICES PRODUCED BY LOCAL ION-IMPLANTATION

被引:8
作者
PETTENPAUL, E [1 ]
HUBER, J [1 ]
WEIDLICH, H [1 ]
FLOSSMANN, W [1 ]
VONBORCKE, U [1 ]
机构
[1] SIEMENS AG,D-8400 REGENSBURG,FED REP GER
关键词
D O I
10.1016/0038-1101(81)90060-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:781 / 786
页数:6
相关论文
共 31 条
  • [1] COHEN E, 1973, B ELECTROTECHN LAB, V37, P50
  • [2] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI
    EDEN, RC
    WELCH, BM
    ZUCCA, R
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426
  • [3] FOLBERTH OG, 1954, Z NATURFORSCH A, V9, P954
  • [4] *UBER DIE ELEKTRISCHEN EIGENSCHAFTEN VON INAS
    FOLBERTH, OG
    GRIMM, R
    WEISS, H
    [J]. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1953, 8 (12): : 826 - 826
  • [5] FOLBERTH OG, 1953, Z NATURFORSCH A, V8, P673
  • [6] GUNTHER KG, 1961, Z NATURFORSCH PT A, V16, P279
  • [7] HALL GENERATORS WITH SMALL LINEARITY ERROR
    HAEUSLER, J
    LIPPMANN, HJ
    [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 173 - &
  • [8] Hall E., 1879, AM J MATH, V2, P287, DOI [10.2307/2369245, DOI 10.2307/2369245]
  • [9] PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS
    HIGGINS, JA
    WELCH, BM
    EISEN, FH
    ROBINSON, GD
    [J]. ELECTRONICS LETTERS, 1976, 12 (01) : 17 - 18
  • [10] EPITAXIAL GAAS HALL GENERATORS FOR HIGH-TEMPERATURE APPLICATIONS
    HOJO, A
    TANAKA, S
    KURU, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 261 - 266