PHOTOEMISSION-STUDY OF THE BAND-GAP ON CESIATED GE(111)1X1-AS

被引：3

作者：

HAKANSSON, MC

JOHANSSON, LSO

VAREKAMP, PR

KARLSSON, UO

KANSKI, J

KOWALSKI, BJ

机构：

[1] ROYAL INST TECHNOL, DEPT PHYS, S-10044 STOCKHOLM, SWEDEN

[2] CHALMERS UNIV TECHNOL, DEPT PHYS, S-41296 GOTHENBURG, SWEDEN

[3] POLISH ACAD SCI, INST PHYS, PL-02668 WARSAW, POLAND

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.52.R11646

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deposition of small amounts of cesium on the As-terminated Ge(111) surface results in population of the lowest unoccupied surface state centered around the Gamma point in the surface Brillouin zone. By using angle-resolved photoemission we have directly determined the gap between this state and the lone-pair surface state to be 0.85 eV. This result provides support for recent quasiparticle band-structure calculations.

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收藏

页码：11646 / 11649

页数：4

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