ELECTROCHEMICAL SMOOTHING OF SILICON (111)

被引：26

作者：

RAPPICH, J

JUNGBLUT, H

AGGOUR, M

LEWERENZ, HJ

机构：

[1] Hahn-Meitner-Institut, Bereich Physikalische Chemie, Abteilunq Grenzflächen

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 08期

关键词：

D O I：

10.1149/1.2055109

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Photocurrent oscillations on n-type silicon (111) in acidic fluoride solutions lead to a reduction of the microscopic roughness on these surfaces, as investigated by Fourier transform infrared spectroscopy (FTIR) with attenuated total reflection techniques under in situ conditions, and by scanning tunneling microscopy (STM) performed in air. Roughness parameters obtained by STM measurements were reduced from 40 +/- 8 to 7 +/- 1 angstrom. The spatial and temporal synchronization during photocurrent oscillations leads to smoothing of large surfaces with a better result than applying an electropolishing treatment.

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页码：L99 / L102

页数：4

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