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SCHOTTKY-BARRIER AND CONTACT RESISTANCE AT A NIOBIUM SILICON INTERFACE

被引：12
作者：
HESLINGA, DR
KLAPWIJK, TM
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 11期
关键词：
D O I：
10.1063/1.100793
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1048 / 1050
页数：3
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