TIGHT-BINDING REPRESENTATION OF THE OPTICAL MATRIX-ELEMENTS - THEORY AND APPLICATIONS

被引:161
作者
VOON, LCLY
RAMMOHAN, LR
机构
[1] WORCESTER POLYTECH INST,DEPT ELECT ENGN,WORCESTER,MA 01609
[2] WORCESTER POLYTECH INST,DEPT COMP SCI,WORCESTER,MA 01609
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 23期
关键词
D O I
10.1103/PhysRevB.47.15500
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have derived new expressions for the interband optical matrix elements of crystalline solids, applicable when the k-space Hamiltonian is known. The formalism does not require a complete knowledge of the electronic states and is hence useful for empirical band-structure calculations. We find that no additional parameters, other than those present in the Hamiltonian, are required. The accuracy of the results obtained from different tight-binding parameter sets for the GaAs/AlAs system for bulk semiconductors and heterostructures is compared.
引用
收藏
页码:15500 / 15508
页数:9
相关论文
共 24 条
[1]   WELL-WIDTH DEPENDENCE OF INTERSUBBAND ABSORPTION IN INGAAS/INALAS MULTIQUANTUM WELLS [J].
ASAI, H ;
KAWAMURA, Y .
APPLIED PHYSICS LETTERS, 1990, 56 (12) :1149-1151
[2]  
BASTARD G, 1988, WAVE MECHANICS APPLI
[4]   SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (02) :790-796
[5]   THEORY OF DIELECTRIC-FUNCTION ANISOTROPIES OF (001) GAAS (2X1) SURFACES [J].
CHANG, YC ;
ASPNES, DE .
PHYSICAL REVIEW B, 1990, 41 (17) :12002-12012
[6]   INTERBAND OPTICAL-TRANSITIONS IN GAAS-GA1-XALXAS AND INAS-GASB SUPERLATTICES [J].
CHANG, YC ;
SCHULMAN, JN .
PHYSICAL REVIEW B, 1985, 31 (04) :2069-2079
[7]  
COHEN ML, 1988, ELECTRONIC STRUCTURE
[8]   OPTICAL EVIDENCE OF THE DIRECT-TO-INDIRECT-GAP TRANSITION IN GAAS-ALAS SHORT-PERIOD SUPERLATTICES [J].
DANAN, G ;
ETIENNE, B ;
MOLLOT, F ;
PLANEL, R ;
JEANLOUIS, AM ;
ALEXANDRE, F ;
JUSSERAND, B ;
LEROUX, G ;
MARZIN, JY ;
SAVARY, H ;
SERMAGE, B .
PHYSICAL REVIEW B, 1987, 35 (12) :6207-6212
[9]   PSEUDOPOTENTIAL AND K.P BAND PARAMETERS FOR GAAS, INP AND INSB [J].
GORCZYCA, I ;
PFEFFER, P ;
ZAWADZKI, W .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10) :963-968
[10]  
HARRISON WA, 1989, ELECTRONIC STRUCTURE