EXPERIMENTAL-OBSERVATION OF SWITCHING IN MISM AND MISIM DEVICES

被引：14

作者：

DARWISH, M

BOARD, K

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 05期

关键词：

MISIM DEVICES - MISM DEVICES;

D O I：

10.1049/ip-i-1.1981.0040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Predictions have been made for two-state switching in metal-thin insulator-semiconductor-metal (MISIM) structures. Experimental verification of such switching is provided in a V-groove and a surface geometry device. Bidirectional switching is shown for the MISM device and three-terminal operation is demonstrated.

引用

页码：161 / 164

页数：4

共 7 条

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].