A LOW-COST MICROPROCESSOR-BASED DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS) SYSTEM

被引：6

作者：

SEXTON, FW ^{[1
]}

BROWN, WD ^{[1
]}

机构：

[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1981年 / 30卷 / 03期

关键词：

D O I：

10.1109/TIM.1981.6312375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：186 / 193

页数：8

共 19 条

[1]

BARNES CE, COMPARISON GAMMA IND

[2] LIGHT-EMITTING DIODES [J].

BERGH, AA ;

DEAN, PJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :156-+

[3]

CHEN JW, 1979, SOLID STATE ELECTRON, V22

[4]

COOK RG, 1979, THESIS U ARKANSAS FA

[5] VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS [J].

CRAFORD, MG ;

GROVES, WO .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :862-880

[6] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[7]

HAWKINS RM, 1977, THESIS U ARKANSAS FA

[8] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].

HENRY, CH ;

KUKIMOTO, H ;

MILLER, GL ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507

[9] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J].

KUKIMOTO, H ;

HENRY, CH ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2486-2499

[10] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

← 1 2 →