RESISTANCE DEPENDENCE OF DETECTED SIGNALS OF MOM DIODES

被引：18

作者：

YASUOKA, Y

SAKURADA, T

SIU, DP

GUSTAFSON, TK

机构：

[1] Electronics Research Laboratory, College of Engineering, University of California, Berkeley

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The detection characteristics of point-contact W-Ni diodes at 10 MHz, 9.5 GHz, and 28.3 THz are investigated as a function of diode resistance (contact pressure). The experimental results are compared with predictions from tunneling theory taking into account circuit parameters. Good agreement is obtained when the relaxation behavior of the metallic whisker antenna is considered at infrared wavelengths.

引用

收藏

页码：5860 / 5864

页数：5

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