CHARACTERISTICS OF LPCVD WISI2/N-SI SCHOTTKY CONTACTS

被引：3

作者：

SHENAI, K

机构：

[1] General Electric Corporate Research and Development Center, Schenectady, NY

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 04期

关键词：

D O I：

10.1109/55.75753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed current-voltage and capacitance-voltage characteristics of LPCVD WSi2/n-Si Schottky contacts are reported in the temperature range of 21 to 170-degrees-C. Diode ideality factor n was found to decrease from a value of 1.46 to 1.15 as temperature is increased. Schottky barrier height phi-B, on the other hand, was found to increase from 0.72 to 0.86 V with temperature. These results suggest that diode characteristics are affected by surface and bulk effects especially at lower temperatures. High-resolution TEM and X-ray photoelectron spectroscopy analyses revealed isolated regions of oxynitride at the silicide/silicon interface that are predominantly located where silicide grain boundaries intersect silicon surface.

引用

页码：169 / 171

页数：3