PULSE ANNEALING DEFICIENCIES IN GAAS

被引：14

作者：

DAVIES, DE

LORENZO, JP

RYAN, TG

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期

关键词：

D O I：

10.1063/1.92037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：612 / 615

页数：4

共 14 条

[1]

ANDERSON CL, 1979, S LASER ELECTRON BEA

[2]

BADAWI MH, UNPUBLISHED

[3] ELECTRON-PULSED DIFFUSION OF SE IN GAAS [J].

DAVIES, DE ;

RYAN, TG ;

LORENZO, JP .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :443-444

[4] PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP [J].

DAVIES, DE ;

LORENZO, JP ;

RYAN, TG ;

FITZGERALD, JJ .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :631-633

[5]

GOLECHI I, 1979, S LASER ELECTRON BEA

[6] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[7]

INADA T, 1979, APPL PHYS LETT, V34, P546

[8]

KENNEDY EP, UNPUBLISHED

[9]

LIU SG, 1979, 1978 P LAS SOL INT L, P603

[10] ANODIC-OXIDATION AND ELECTRICAL CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED INP [J].

LORENZO, JP ;

DAVIES, DE ;

RYAN, TG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) :118-121

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