ORIGIN OF COLD CLEAVED (7 X 7) STRUCTURE ON SILICON (111) SURFACES

被引：4

作者：

BOSKOVITZ, G ^{[1
]}

HANEMAN, D ^{[1
]}

机构：

[1] UNIV NEW S WALES, SURFACE PHYS DIV, KINGSTON 2033, AUSTRALIA

来源：

SURFACE SCIENCE | 1974年 / 44卷 / 01期

关键词：

D O I：

10.1016/0039-6028(74)90106-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：253 / 257

页数：5

共 11 条

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[6] ATOMIC MISMATCH ON CLOSURE OF CONTROLLED PARTIAL SPLITS IN SILICON [J].

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[8]

MONCH W, 1973, FESTKORPERPROBLEME, V13, P241

[9] SILICON (111)-7 STRUCTURE OBTAINED BY CLEAVAGE AT ROOM TEMPERATURE [J].

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HANEMAN, D .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :130-&

[10] OBSERVATIONS OF CLEANED AND OXYGEN EXPOSED SURFACES OF SILICON AND GERMANIUM BY REFLECTION HIGH ENERGY ELECTRON DIFFRACTION [J].

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