SILICON (111)-7 STRUCTURE OBTAINED BY CLEAVAGE AT ROOM TEMPERATURE

被引：10

作者：

RIDGWAY, JWT

HANEMAN, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 03期

关键词：

D O I：

10.1063/1.1653334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：130 / &

共 9 条

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HANEMAN, D .

SURFACE SCIENCE, 1969, 18 (02) :441-&

[7] SILICON (3) 7X7 STRUCTURE [J].

RIDGWAY, JWT ;

HANEMAN, D .

APPLIED PHYSICS LETTERS, 1969, 14 (09) :265-&

[8]

RIDGWAY JWT, 1970, PHYS STATUS SOLIDI

[9] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].

SCHLIER, RE ;

FARNSWORTH, HE .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926

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