PULSE RISE TIME IN PLANAR GUNN DEVICES

被引：9

作者：

SCHLACHETZKI, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 09期

关键词：

D O I：

10.1143/JJAP.14.1335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1335 / 1337

页数：3

共 9 条

[1]

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[3] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J].

HILSUM, C .

ELECTRONICS LETTERS, 1974, 10 (13) :259-260

[4] CIRCUIT INTEGRATION OF GAAS GUNN DEVICES [J].

MAUSE, K ;

SCHLACHE.A ;

HESSE, E ;

SALOW, H .

IEEE TRANSACTIONS ON COMMUNICATIONS, 1974, CO22 (09) :1435-1440

[5]

MAUSE K, 1973, 4 P CORN C MICR SEM, P211

[6] SWITCHING SPEED AND POWER DISSIPATION OF PLANAR-TYPE GUNN DIODES [J].

NAKAMURA, M ;

KURONO, H ;

TOYABE, T ;

HIRAO, M ;

KODERA, H .

SOLID-STATE ELECTRONICS, 1973, 16 (01) :75-+

[7] CURRENT PULSES IN PLANAR GAAS GUNN DEVICES [J].

SCHLACHE.A ;

HESSE, E .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :633-635

[8]

SUGETA T, 1970, ELECTRON COMMUN JPN, V53, P127

[9]

SUGETA T, 1970, ELECTRON COMMUN JPN, V53, P118

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