CURRENT PULSES IN PLANAR GAAS GUNN DEVICES

被引：3

作者：

SCHLACHE.A ^{[1
]}

HESSE, E ^{[1
]}

机构：

[1] RES INST FERNMELDETECHN ZENTRALAMT GERMAN PO,AM KAVALLERIESAND 3,D-61 DARMSTADT,WEST GERMANY

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 06期

关键词：

D O I：

10.1016/0038-1101(74)90185-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：633 / 635

页数：3

共 19 条

[1] ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS [J].

DILORENZO, JV ;

MARCUS, RB ;

LEWIS, R .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :729-+

[2] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[3]

GROBE E, 1972, Z ANGEW PHYSIK, V32, P381

[4]

GRUBIN HL, 1972, 4 P INT S GAAS REL C, P256

[5]

HARTNAGEL H, 1971, AEU-ARCH ELEKTRON UB, V25, P51

[6] THEORY OF GUNN-EFFECT LOGIC [J].

HARTNAGEL, HL .

SOLID-STATE ELECTRONICS, 1969, 12 (01) :19-+

[7] PULSE GENERATION IN PLANAR GUNN DEVICES WITH VARYING NL PRODUCT [J].

HEIME, K ;

SCHLACHETZKI, A .

ELECTRONICS LETTERS, 1972, 8 (08) :203-+

[8] NEGATIVE CONDUCTANCE IN SEMICONDUCTORS [J].

KROEMER, H .

IEEE SPECTRUM, 1968, 5 (01) :47-+

[9] GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS [J].

KROEMER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) :819-+

[10]

MAUSE K, 1972, 4 INT S GAAS I PHYS, V17, P275

← 1 2 →