NEGATIVE CONDUCTANCE IN SEMICONDUCTORS

被引：32

作者：

KROEMER, H

机构：

来源：

IEEE SPECTRUM | 1968年 / 5卷 / 01期

关键词：

D O I：

10.1109/MSPEC.1968.5215632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Until recently, investigators have been frustrated in their attempts at applying microwave and millimeter-wave frequencies to semiconductor devices. During the last few years, the discovery of avalanche transit-time and Gunn effects in bulk semiconductors has been met with overwhelming enthusiasm. The successful fabrication of models presently utilizing these negative-conductance phenomena has given these high-frequency devices an optimistic outlook for the future. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

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页码：47 / +

页数：1

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