PULSE-DRIVEN SILICON P-N JUNCTION AVALANCHE OSCILLATORS FOR 0.9 TO 20 MM BAND

被引：23

作者：

BOWMAN, LS

BURRUS, CA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 08期

关键词：

D O I：

10.1109/T-ED.1967.15974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：411 / +

页数：1

共 15 条

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[7] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

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[8]

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