MILLIMETER-WAVE OSCILLATIONS FROM AVALANCHING P-N JUNCTIONS IN SILICON

被引:13
作者
BURRUS, CA
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 09期
关键词
D O I
10.1109/PROC.1965.4204
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1256 / &
相关论文
共 3 条
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JOHNSTON, RL ;
DELOACH, BC ;
COHEN, BG .
BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02) :369-+
[2]   READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J].
LEE, CA ;
BATDORF, RL ;
WIEGMANN, W ;
KAMINSKY, G .
APPLIED PHYSICS LETTERS, 1965, 6 (05) :89-&
[3]   A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].
READ, WT .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446